1/9 june 2004 STW30NM60D n-channel 600v - 0.125 ? - 30a to-247 fast diode mdmesh? mosfet table 1: general features typical r ds (on) = 0.125 ? high dv/dt and avalanche capabilities 100% avalanche rated low input capacitance and gate charge low gate input resistance fast internal recovery diode description the fdmesh? associates all advantages of re- duced on-resistance and fast switching with an in- trinsic fast-recovery body diode. it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. applications zvs phase-shift full bridge converters for smps and welding equipment table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d STW30NM60D 600 v < 0.145 ? 30 a to-247 sales type marking package packaging STW30NM60D w30nm60d to-247 tube rev. 3
STW30NM60D 2/9 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 30a, di/dt 400a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25c unless otherwise specified) table 6: on /off symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 30 a i d drain current (continuous) at t c = 100c 18.9 a i dm ( ) drain current (pulsed) 120 a p tot total dissipation at t c = 25c 312 w derating factor 2.5 w/c dv/dt (1) peak diode recovery voltage slope 20 v/ns t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c rthj-case thermal resistance junction-case max 0.4 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 740 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5v r ds(on static drain-source on resistance v gs = 10 v, i d = 15 a 0.125 0.145 ?
3/9 STW30NM60D table 7: dynamic table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. (3) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 15 a 16 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 2520 800 75 pf pf pf c oss eq (3) . equivalent output capacitance v gs = 0 v, v ds = 0 to 480 v 390 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 15 a, r g = 4.7 ?, v gs = 10 v (see figure 15) 32 33 75 35 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 30 a, v gs = 10 v (see figure 18) 82 24 42 115 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 30 120 a a v sd (1) forward on voltage i sd = 30 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a, di/dt = 100 a/s v dd = 50v (see figure 16) 165 1.1 14 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a, di/dt = 100 a/s v dd = 50v, t j = 150c (see figure 16) 312 3.3 21 ns nc a
STW30NM60D 4/9 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/9 STW30NM60D figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature
STW30NM60D 6/9 figure 14: unclamped inductive load test cir- cuit figure 15: switching times test circuit for resistive load figure 16: test circuit for inductive load switching and diode recovery times figure 17: unclamped inductive wafeform figure 18: gate charge test circuit
7/9 STW30NM60D dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STW30NM60D 8/9 table 9: revision history date revision description of changes 24-june-2004 3 the document change from ? advanced ? to ? complete ? . new stylesheet. rds(on) max@10v changed. see table 6.
9/9 STW30NM60D information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states.
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